Excitons in semiconductor heterostructures
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Выпускная квалификационная работа посвящена проблеме взаимодействия света с экситонами в микрорезонаторах с квантовыми ямами. Целью данной работы является экспериментальное исследование и теоретическое моделирование спектров отражения и экситонной фотолюминесценции параболической квантовой ямы InGaAs/GaAs, помещенной в низкодобротный микрорезонатор, состоящий из слоев GaAs/AlAs. Актуальность изучения процессов, происходящих в микрорезонаторах, обусловлена широкими возможностями их использования как для прикладных, так и для научных задач. В таких структурах за счет перенормировки плотности состояний электромагнитного поля наблюдается усиленное взаимодействие материальных возбуждений со светом. Однако в высокодобротных микрорезонаторах сильное отражение от верхнего зеркала не позволяет изучать процессы излучения в них. В данной работе удалось наблюдать излучение сквозь верхнее зеркало микрорезонатора, а также определить по нему основное и возбужденные состояния экситона в квантовой яме. Выполнено моделирование спектров отражения микрорезонатора, согласующееся с экспериментальными результатами данной работы.
The graduate qualification paper considers a problem of the exciton-light interaction in microcavities with quantum wells. The goal of this work is the experimental study and the simulation of the reflection and exciton photoluminescence spectra of a 100-nm parabolic quantum well made of an InGaAs layer surrounded by the GaAs barriers and embedded in a low-finesse microcavity consisting of two GaAs/AlAs Bragg reflectors. The study of the exciton-light interaction in microcavities is of primary importance due to wide possibilities of usage of such heterostructures for both applied and scientific researches. In such structures due to the renormalization of the density of states of the electromagnetic field, the interaction between excitons and light is strongly enhanced. However, in the high-finesse microcavities, the strong reflection from the upper mirror does not allow one to study the emission processes in the quantum well. It was managed in present work to observe the exciton emission throughout the upper mirror of the microcavity. Moreover, it was possible to determine the energies of the ground and excited states of the excitons in the quantum well. A simulation of the reflection spectra of the microcavity is performed. The simulated data agree with the experimental results of this work.
The graduate qualification paper considers a problem of the exciton-light interaction in microcavities with quantum wells. The goal of this work is the experimental study and the simulation of the reflection and exciton photoluminescence spectra of a 100-nm parabolic quantum well made of an InGaAs layer surrounded by the GaAs barriers and embedded in a low-finesse microcavity consisting of two GaAs/AlAs Bragg reflectors. The study of the exciton-light interaction in microcavities is of primary importance due to wide possibilities of usage of such heterostructures for both applied and scientific researches. In such structures due to the renormalization of the density of states of the electromagnetic field, the interaction between excitons and light is strongly enhanced. However, in the high-finesse microcavities, the strong reflection from the upper mirror does not allow one to study the emission processes in the quantum well. It was managed in present work to observe the exciton emission throughout the upper mirror of the microcavity. Moreover, it was possible to determine the energies of the ground and excited states of the excitons in the quantum well. A simulation of the reflection spectra of the microcavity is performed. The simulated data agree with the experimental results of this work.